The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Jan. 10, 2014
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Myong Soo Cho, Yongin-si, KR;

Tae Hun Kim, Anyang-si, KR;

Young Ho Ryu, Suwon-si, KR;

Young Chul Shin, Yongin-si, KR;

Dong Myung Shin, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/382 (2013.01);
Abstract

In one example embodiment, a semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer having at least one contact hole exposing a region of the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes at least one columnar structure disposed in the exposed region of the first conductivity-type semiconductor layer within the at least one contact hole. The semiconductor light emitting device further includes a first electrode disposed on the exposed region of the first conductivity-type semiconductor layer in which the at least one columnar structure is disposed, the first electrode being connected to the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes a second electrode connected to the second conductivity-type semiconductor layer.


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