The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Oct. 08, 2013
Applicant:

Lg Innotek Co., Ltd., Seoul, KR;

Inventors:

Dae Seob Han, Seoul, KR;

Yong Tae Moon, Seoul, KR;

Kwang Sun Baek, Seoul, KR;

A Ra Cho, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/88 (2006.01); H01L 29/861 (2006.01); H01L 33/06 (2010.01); H01L 33/04 (2010.01); H01L 33/32 (2010.01); H01L 33/00 (2010.01); H01L 33/14 (2010.01); H01L 33/22 (2010.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/0025 (2013.01); H01L 33/04 (2013.01); H01L 33/145 (2013.01); H01L 33/32 (2013.01); H01L 33/22 (2013.01); H01L 2224/48091 (2013.01);
Abstract

The embodiment relates to a light-emitting device, a method of manufacturing the same, a light-emitting device package, and a lighting system. A light-emitting device according to the embodiment may include: a first conductive semiconductor layer; a gallium nitride-based superlattice layer on the first conductive semiconductor layer; an active layer on the gallium nitride-based superlattice layer; a second conductive gallium nitride-based layer on the active layer; and a second conductive semiconductor layer on the second conductive gallium nitride-based layer. The second conductive gallium nitride-based layer may include a second conductive GaN layer having a first concentration, a second conductive InAlGaN (0<x<1, 0<y<1) layer having a second concentration and a second conductive AlGaN (0<z<1) layer having a third concentration on the active layer.


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