The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Apr. 26, 2012
Applicants:

Andrea Knigge, Konigs Wusterhausen, DE;

Markus Weyers, Wildau, DE;

Hans-joachim Wurfl, Zeuthen, DE;

Inventors:

Andrea Knigge, Konigs Wusterhausen, DE;

Markus Weyers, Wildau, DE;

Hans-Joachim Wurfl, Zeuthen, DE;

Assignee:
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 31/0352 (2006.01); H01L 31/0224 (2006.01); H01L 31/0304 (2006.01); H01L 31/108 (2006.01); H01L 31/102 (2006.01);
U.S. Cl.
CPC ...
H01L 31/035272 (2013.01); H01L 31/0224 (2013.01); H01L 31/022408 (2013.01); H01L 31/022466 (2013.01); H01L 31/03048 (2013.01); H01L 31/035209 (2013.01); H01L 31/035281 (2013.01); H01L 31/102 (2013.01); H01L 31/1085 (2013.01); Y02E 10/544 (2013.01); Y02P 70/521 (2015.11);
Abstract

The present invention relates to a UV photodetector having a high sensitivity and a low dark current. The object of the present invention is to specify a UV photodetector that has a high sensitivity and a low dark current. According to the invention, the fingers of the first electrode structure and the fingers of the second electrode structure have a cover layer made of a second semiconducting material, wherein the cover layer is arranged on the absorber layer and directly contacts the absorber layer in the region of the fingers, and the first semiconducting material and the second semiconducting material are designed in such a manner that a two-dimensional electron gas (2DEG) is formed at the boundary layer between the absorber layer and the cover layer in the region of the fingers.


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