The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Feb. 26, 2013
Joled Inc., Tokyo, JP;
Panasonic Liquid Crystal Display Co., Ltd., Hyogo, JP;
JOLED INC., Tokyo, JP;
PANASONIC LIQUID CRYSTAL DISPLAY CO., LTD., Hyogo, JP;
Abstract
A thin-film semiconductor device includes: a substrate; a gate electrode above the substrate; a gate insulation film above the gate electrode; a channel layer above the gate insulation film, the channel layer having a raised part; a channel protection layer over the raised part of the channel layer, the channel protection layer comprising an organic material, and the organic material including silicon, oxygen, and carbon; an interface layer at an interface between a top surface of the raised part of the channel layer and the channel protection layer, and comprises at least carbon and silicon that derive from the organic material; and a source electrode and a drain electrode each provided over a top surface and a side surface the channel protection layer, a side surface of the interface layer, a side surface of the raised part of the channel layer, and a top surface of the channel layer.