The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Jun. 07, 2015
Texas Instruments Incorporated, Dallas, TX (US);
Ebenezer Eshun, Frisco, TX (US);
TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);
Abstract
An integrated circuit containing an NMOS transistor with a boron-doped halo is formed by co-implanting carbon in at least three angled doses with the boron halo implants. The carbon is co-implanted at tilt angles within 5 degrees of the boron halo implant tilt angle. An implant energy of at least one of the angled carbon co-implant is greater than the implant energy of the boron halo implant. A total carbon dose of the angled carbon co-implants is at least 5 times a total boron dose of the boron halo implants. The NMOS transistor has a carbon concentration in the halo regions which is at least 5 times greater than the boron concentration in the halo regions. The co-implanted carbon extends under the gate of the NMOS transistor.