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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9431520 B1

PDFFull Text
Date of Patent:
Aug. 30, 2016

Filed:

Jul. 27, 2015

Graphene nanoribbons and carbon nanotubes fabricated from sic fins or nanowire templates

Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Guy M. Cohen, Mohegan Lake, NY (US);

Christos D. Dimitrakopoulos, Baldwin Place, NY (US);

Alfred Grill, White Plains, NY (US);

Assignee:

GLOBALFOUNDRIES INC., Grand Cayman, KY;

Attorney:

Scully, Scott, Murphy & Presser, P.C.

Primary Examiner:

Cuong Q Nguyen

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 21/3105 (2006.01); H01L 21/306 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); B82Y 10/00 (2011.01); B82Y 40/00 (2011.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/16 (2006.01); H01L 51/00 (2006.01); H01L 21/28 (2006.01); H01L 29/78 (2006.01); H01L 51/05 (2006.01); B82Y 99/00 (2011.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); B82Y 10/00 (2013.01); B82Y 40/00 (2013.01); H01L 21/02057 (2013.01); H01L 21/02381 (2013.01); H01L 21/02527 (2013.01); H01L 21/02529 (2013.01); H01L 21/02636 (2013.01); H01L 21/28008 (2013.01); H01L 21/30604 (2013.01); H01L 21/31051 (2013.01); H01L 21/324 (2013.01); H01L 29/0673 (2013.01); H01L 29/1025 (2013.01); H01L 29/1606 (2013.01); H01L 29/66439 (2013.01); H01L 29/66742 (2013.01); H01L 29/775 (2013.01); H01L 51/0045 (2013.01); H01L 51/0048 (2013.01); B82Y 99/00 (2013.01); H01L 29/66787 (2013.01); H01L 29/785 (2013.01); H01L 51/0558 (2013.01);
Abstract

Semiconductor structures including parallel graphene nanoribbons or carbon nanotubes oriented along crystallographic directions are provided from a template of silicon carbide (SiC) fins or nanowires. The SiC fins or nanowires are first provided and then graphene nanoribbons or carbon nanotubes are formed on the exposed surfaces of the fin or the nanowires by annealing. In embodiments in which closed carbon nanotubes are formed, the nanowires are suspended prior to annealing. The location, orientation and chirality of the graphene nanoribbons and the carbon nanotubes that are provided are determined by the corresponding silicon carbide fins and nanowires from which they are formed.

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