The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Mar. 06, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 21/28 (2006.01); H01L 21/321 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); H01L 21/28088 (2013.01); H01L 21/28176 (2013.01); H01L 21/28194 (2013.01); H01L 21/28202 (2013.01); H01L 21/321 (2013.01); H01L 21/823842 (2013.01); H01L 21/823857 (2013.01); H01L 29/4966 (2013.01); H01L 29/517 (2013.01); H01L 29/513 (2013.01);
Abstract
Methods of forming semiconductor devices are provided. A method of forming a semiconductor device includes forming an insulating layer that includes a trench therein. The method includes forming a high-k layer in the trench. Moreover, the method includes forming a metal layer on the high-k layer, then performing a first heat treatment at a first temperature, and performing a second heat treatment at a second temperature that is higher than the first temperature.