The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Aug. 08, 2014
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Yongping Ding, San Jose, CA (US);
Yeeheng Lee, San Jose, CA (US);
Xiaobin Wang, San Jose, CA (US);
Madhur Bobde, Sunnyvale, CA (US);
Alpha and Omega Semiconductor Incorporated, Sunnyvale, CA (US);
Abstract
A method of manufacturing a trench power MOSFET device with improved UIS performance and a high avalanche breakdown voltage is disclosed. The method includes performing a first etching of the epitaxial layer to form an active trench with an initial depth in an active area of the semiconductor substrate and a termination trench with a desired depth in a termination area of the semiconductor substrate, wherein the initial depth of the active trench is smaller than the desired depth of the termination trench and performing a second etching to increase the depth of the active trench to a desired depth wherein a depth difference between the desired depth of the active trench and the desired depth of the termination trench is smaller than a depth difference between the initial depth of the active trench and the desired depth of the termination trench.