The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Feb. 27, 2015
Applicants:
Tamura Corporation, Tokyo, JP;
Koha Co., Ltd., Tokyo, JP;
Inventors:
Kimiyoshi Koshi, Tokyo, JP;
Shinya Watanabe, Tokyo, JP;
Masaru Takizawa, Tokyo, JP;
Yu Yamaoka, Tokyo, JP;
Makoto Watanabe, Tokyo, JP;
Takekazu Masui, Tokyo, JP;
Assignees:
TAMURA CORPORATION, Tokyo, JP;
KOHA CO., LTD., Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 29/24 (2006.01); C01G 15/00 (2006.01); C03B 29/16 (2006.01); C30B 29/16 (2006.01); H01L 21/02 (2006.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 29/24 (2013.01); C01G 15/00 (2013.01); C30B 29/16 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02414 (2013.01); H01L 21/02458 (2013.01); H01L 21/02576 (2013.01); H01L 33/007 (2013.01); H01L 33/32 (2013.01);
Abstract
A β-GaO-based single crystal substrate includes an average dislocation density of less than 7.31×10cm. The average dislocation density may be not more than 6.14×10cm. The substrate may further include a main surface including a plane orientation of (−201), (101) or (001). The substrate may be free from any twinned crystal.