The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Sep. 19, 2014
Fairchild Semiconductor Corporation, San Jose, CA (US);
Jaegil Lee, Puchon-si, KR;
Fairchild Semiconductor Corporation, San Jose, CA (US);
Abstract
In a general aspect, a power device can include an epitaxial layer of a first conductivity type, an active region, a termination region surrounding the active region, a plurality of trenches disposed in the epitaxial layer, and silicon material of a second conductivity type disposed in the plurality of trenches. The silicon material of the second conductivity type and a plurality of mesas defined in the epitaxial layer by the trenches, can define a plurality of concentric octagon-shaped pillars of alternating conductivity type, a first portion of the pillars being disposed in the active region and a second portion of the pillars being disposed in the termination region. Sidewalls of the plurality of trenches can define a first four legs and a second four legs of each of the pillars. The sidewalls can have a same crystallographic plane direction.