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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9431479 B1

PDFFull Text
Date of Patent:
Aug. 30, 2016

Filed:

Jul. 28, 2010

High breakdown voltage semiconductor device having a resurf layer

Applicants:

Shigeto Honda, Tokyo, JP;

Atsushi Narazaki, Tokyo, JP;

Kaoru Motonami, Tokyo, JP;

Inventors:

Shigeto Honda, Tokyo, JP;

Atsushi Narazaki, Tokyo, JP;

Kaoru Motonami, Tokyo, JP;

Assignee:

Mitsubishi Electric Corporation, Tokyo, JP;

Attorney:

Oblon, McClelland, Maier & Neustadt, L.L.P.

Primary Examiner:

Eduardo A Rodela

Assistant Examiner:

Christopher M Roland

Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/16 (2006.01); H01L 29/20 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0615 (2013.01); H01L 29/063 (2013.01); H01L 29/0657 (2013.01); H01L 29/0661 (2013.01); H01L 29/402 (2013.01); H01L 29/66128 (2013.01); H01L 29/8611 (2013.01); H01L 29/0638 (2013.01); H01L 29/1608 (2013.01); H01L 29/2003 (2013.01); H01L 29/7811 (2013.01);
Abstract

In a semiconductor device according to the present invention, an electrode layer and a recessed part are formed on a surface of a semiconductor substrate. Further, in the semiconductor substrate, a RESURF layer that is in contact with a bottom surface of the recessed part and the electrode layer is formed. In addition, an insulating film is formed on an upper surface of the semiconductor substrate so as to fill the recessed part. Moreover, a field plate electrode is formed on the insulating film above the recessed part.

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Honda, Shigeto. (2016). High breakdown voltage semiconductor device having a resurf layer (U.S. Patent No. 9431479). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9431479

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