The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Dec. 05, 2012
Imec, Leuven, BE;
Mihaela Ioana Popovici, Leuven, BE;
IMEC, Leuven, BE;
Abstract
A method for manufacturing a metal-insulator-metal (MIM) stack is described. The method includes forming a temporary stack by depositing a bottom electrode comprising at least one metal layer; depositing a dielectric comprising at least one layer of a dielectric material having a first dielectric constant value; and depositing a top electrode comprising at least one metal layer. The step of depositing the bottom and/or top electrode includes depositing a non-conductive metal oxide layer directly in contact with the dielectric; and after the step of depositing the bottom and/or top electrode's non-conductive metal oxide layer and the dielectric, subjecting the temporary stack to a stimulus, which transforms the non-conductive metal oxide into a thermodynamically stable oxide having conductive properties or into a metal, and the dielectric material into a crystalline form having a second dielectric constant value higher than the first dielectric constant value, thereby creating the final MIM stack.