The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
May. 13, 2015
Omnivision Technologies, Inc., Santa Clara, CA (US);
Chia-Ying Liu, Hsinchu, TW;
Chih-Wei Hsiung, San Jose, CA (US);
OmniVision Technologies, Inc., Santa Clara, CA (US);
Abstract
An image sensor includes a photodiode proximate to a front side of semiconductor material to accumulate image charge. A metal layer reflector structure is disposed in a dielectric layer proximate to the front side of the semiconductor material. A contact reflecting ring structure is disposed in the dielectric layer between the metal layer reflector structure and a contact etch stop layer disposed over the front side of the semiconductor material. The contact reflecting ring structure defines a portion of a light guide in the dielectric layer such that light that is directed through a back side of the semiconductor material, through the photodiode, and reflected from the metal layer reflector structure back through the photodiode is confined to remain within an interior of the contact reflecting ring structure when passing through the dielectric layer between the photodiode and the metal layer reflector structure.