The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Apr. 28, 2015
Won-seok Jung, Anyang-si, KR;
Chang-seok Kang, Seongnam-si, KR;
Min-yong Lee, Incheon, KR;
Sang-woo Jin, Hwasung-si, KR;
Won-Seok Jung, Anyang-si, KR;
Chang-Seok Kang, Seongnam-si, KR;
Min-Yong Lee, Incheon, KR;
Sang-Woo Jin, Hwasung-si, KR;
Abstract
A vertical memory device and a method of manufacturing a vertical memory device are disclosed. The vertical memory device includes a substrate, a plurality of channels, a charge storage structure, a plurality of gate electrodes, a first semiconductor structure, and a protection layer pattern. The substrate includes a first region and a second region. The plurality of channels is disposed in the first region. The plurality of channels extends in a first direction substantially perpendicular to a top surface of the substrate. The charge storage structure is disposed on a sidewall of each channel. The plurality of gate electrodes is arranged on a sidewall of the charge storage structure and is spaced apart from each other in the first direction. The first semiconductor structure is disposed in the second region. The protection layer pattern covers the first semiconductor structure. The protection layer pattern has a thickness substantially similar to a thickness of a lowermost gate electrode.