The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Sep. 08, 2015
Applicant:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Inventors:

Tatsuya Kato, Yokkaichi Mie, JP;

Fumitaka Arai, Yokkaichi Mie, JP;

Satoshi Nagashima, Yokkaichi Mie, JP;

Katsuyuki Sekine, Yokkaichi Mie, JP;

Yuta Watanabe, Yokkaichi Mie, JP;

Keisuke Kikutani, Yokkaichi Mie, JP;

Atsushi Murakoshi, Yokkaichi Mie, JP;

Assignee:

Kabushiki Kaisha Toshiba, Minato-ku, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 27/11521 (2013.01);
Abstract

According to one embodiment, a semiconductor memory device includes a first array extending in a first direction, a second array extending in the first direction, and a second electrode film. The second array is arranged with the first array in a second direction crossing the first direction. The second electrode film provided between the first array and the second array. The second electrode film extends in the first direction. Each of the first array and the second array include a first structure, a second structure arranged in the first direction, a fourth insulating film provided between the first structure and the second structure, and a third insulating film provided between the first structure and the second electrode film, provided also between the first structure and the fourth insulating film.


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