The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Nov. 23, 2015
Applicant:
Fujitsu Semiconductor Limited, Yokohama, Kanagawa, JP;
Inventors:
Assignee:
FUJITSU SEMICONDUCTOR LIMITED, Yokohama, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/861 (2006.01); H01L 29/872 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 27/0676 (2013.01); H01L 29/0642 (2013.01); H01L 29/861 (2013.01); H01L 29/872 (2013.01);
Abstract
A semiconductor device includes: a first well provided in a semiconductor substrate; a second well provided in the semiconductor substrate, so as to be isolated from the first well; a Schottky barrier diode formed in the first well; and a PN junction diode formed in the second well, with an impurity concentration of the PN junction thereof set higher than an impurity concentration of the Schottky junction of the Schottky barrier diode, and being connected antiparallel with the Schottky barrier diode.