The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Feb. 24, 2014
Applicant:

Magnachip Semiconductor, Ltd., Cheongju-si, KR;

Inventors:

Kyong Jin Hwang, Cheongju-si, KR;

Jin Seop Shim, Cheongju-si, KR;

Jae Hyun Lee, Cheongju-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/732 (2006.01); H01L 29/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0259 (2013.01); H01L 29/0821 (2013.01); H01L 29/732 (2013.01);
Abstract

An ESD transistor and an ESD protection circuit thereof are provided. An ESD transistor includes a collector region disposed on a surface of a substrate, a sink region disposed vertically below the collector region, and a buried layer protruding horizontally further than the sink region under the sink region.


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