The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Aug. 07, 2014
Applicant:

Hamilton Sundstrand Corporation, Charlotte, NC (US);

Inventors:

Eric Karlen, Rockford, IL (US);

William Louis Wentland, Rockford, IL (US);

John Horowy, Rockford, IL (US);

Debabrata Pal, Hoffman Estates, IL (US);

Assignee:

HAMILTON SUNDSTRAND CORPORATION, Charlotte, NC (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/495 (2006.01); H01L 23/14 (2006.01); H01L 23/50 (2006.01); H01L 21/48 (2006.01);
U.S. Cl.
CPC ...
H01L 23/49582 (2013.01); H01L 21/4821 (2013.01); H01L 23/14 (2013.01); H01L 23/49534 (2013.01); H01L 23/49541 (2013.01); H01L 23/49568 (2013.01); H01L 23/49575 (2013.01); H01L 23/50 (2013.01);
Abstract

An integrated circuit assembly element formed via an additive manufacturing technique, such as mixing a conductive material with a memory metal to form a portion of a substrate in desired locations, such as along the footprint of die, are discussed herein. In operation (e.g. in response to thermal cycling of the assembly) the memory metal contracts while the conductive material expands. The result is an element having reduced thermal expansion, which can be net zero coefficient of thermal expansion and/or be catered to the coefficient of thermal expansion of a desired material, such as the silicon die.


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