Simulation method, simulation program, process control system, simulator, process design method, and mask design method

Abstract

A simulation method includes acquiring processing conditions for performing an etching process using plasma on a surface of a wafer covered by a mask having a predetermined mask thickness and aperture ratio, calculating, based on the conditions, a flux amount of a reaction product that enters the surface, calculating, based on mask information including the thickness and the aperture ratio and the flux amount, an etching rate of the wafer, calculating, based on the conditions and the etching rate, a dissociation fraction of the product, calculating, based on the information and the etching rate, a solid angle at a predetermined evaluation point set on the surface, the solid angle corresponding to a view area in which plasma space can be seen from the evaluation point, and calculating, based on the etching rate, the dissociation fraction, the solid angle, and the aperture ratio, a control index for evaluating a surface shape.