The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
Jan. 31, 2014
Spansion Llc, Sunnyvale, CA (US);
Hagop Nazarian, San Jose, CA (US);
Richard Fastow, Cupertino, CA (US);
CYPRESS SEMICONDUCTOR CORPORATION, San Jose, CA (US);
Abstract
Various aspects provide for a new combination of non-volatile memory architecture and memory processing technology. A memory cell has a gate node, a source node and a drain node. The gate node is connected to a wordline of the memory, the source node is connected to a local source line of the memory, and the drain node is connected to a local data line of the memory. A channel-based processing component programs the memory cell and inhibits programming of a second memory cell on the wordline of the memory. The channel-based processing component also grounds the local source line and the local data line in conjunction with programming the memory cell, and floats a second local source line and a second local data line connected to the second memory cell in conjunction with inhibiting programming of the second memory cell.