Hierarchical negative bitline boost write assist for sram memory devices

Abstract

A memory device having a plurality of banks of memory cells may be provided. Each memory cells may be interconnected via a local write bit-line and a complementary local write bit-line to a local write bit-line buffer circuit. The local write bit-line buffer circuit may be connected via a global write bit-line and a complementary one to a negative bias write assist circuit. The memory device may also comprise an address decoder separately connected to the local write bit-line buffer circuits. The address decoder may comprise a generating unit for enabling exactly one local write enable signal for a respective one of said local write bit-line buffer circuits. The local write bit-line buffer circuit may be adapted for generating local write data on said local write bit-line in response to receiving global write data on said global write bit-line when its local write enable signal is enabled.