The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

May. 12, 2015
Applicant:

Oxide Corporation, Yamanashi, JP;

Inventor:

Yushi Kaneda, Yamanashi, JP;

Assignee:

OXIDE CORPORATION, Yamanashi, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 3/30 (2006.01); G02F 1/37 (2006.01); H01S 3/067 (2006.01); H01S 3/109 (2006.01); H01S 3/16 (2006.01); H01S 3/10 (2006.01); H01S 3/23 (2006.01);
U.S. Cl.
CPC ...
G02F 1/37 (2013.01); H01S 3/06754 (2013.01); H01S 3/109 (2013.01); H01S 3/10092 (2013.01); H01S 3/1608 (2013.01); H01S 3/1616 (2013.01); H01S 3/23 (2013.01);
Abstract

In one embodiment, the present disclosure provides a deep ultraviolet laser generation devicehaving a first laser sourceat a first wavelength between 1.87 μm and 2.1 μm, a second laser sourceat a second wavelength between 1.53 μm and 1.57 μm, a nonlinear wavelength conversion elementfor generating near-infrared lightat a wavelength between 841 nm and 899 nm through a sum-frequency mixing (SFM) process, a nonlinear wavelength conversion elementfor generating blue lightat a wavelength between 420 nm and 450 nm from the near-infrared light through a second harmonic generation (SHG) process, and a third nonlinear wavelength conversion elementfor generating deep ultraviolet lightat a wavelength between 210 nm and 225 nm from the blue light, through another SHG process. The first laser source may be a thulium-doped laser source or a thulium-doped fiber source, and the second laser source may be a semiconductor laser source, an erbium-doped fiber source, or an erbium/ytterbium-doped fiber source.


Find Patent Forward Citations

Loading…