The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 30, 2016

Filed:

Jan. 28, 2014
Applicant:

Siemens Medical Solutions Usa, Inc., Malvern, PA (US);

Inventors:

Brant Quinton, Knoxville, TN (US);

Mark S. Andreaco, Knoxville, TN (US);

Troy Marlar, Knoxville, TN (US);

Peter Carl Cohen, Knoxville, TN (US);

Merry A. Koschan, Knoxville, TN (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 1/10 (2006.01); C30B 29/34 (2006.01); C30B 29/28 (2006.01); C30B 1/02 (2006.01); C09K 11/77 (2006.01); C30B 15/00 (2006.01); C30B 33/02 (2006.01); C30B 33/08 (2006.01);
U.S. Cl.
CPC ...
C30B 29/34 (2013.01); C09K 11/7774 (2013.01); C30B 1/02 (2013.01); C30B 1/10 (2013.01); C30B 15/00 (2013.01); C30B 29/28 (2013.01); C30B 33/02 (2013.01); C30B 33/08 (2013.01);
Abstract

The use of the effect of crystallographic axis orientation on the effectiveness in annealing in multiple atmospheres and chemical compositions of lutetium oxyorthosilicate crystals and other scintillator crystals is disclosed. By controlling axis orientation an favorable annealing condition can be selected to repair both internal interstitial and vacancy defects through the crystal lattice. Axis orientation can be further utilized to control the uniformity of surface finish of chemically etched crystal.


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