The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2016
Filed:
May. 05, 2014
Applicant:
Advanced Bonding Technology, Inc., Amherst, NH (US);
Inventors:
Alina Chand, Paxton, MA (US);
Ronald H. Chand, Paxton, MA (US);
Stephen G. DiPietro, Mont Vernon, NH (US);
Vimal K. Pujari, Northborough, MA (US);
Assignee:
Advanced Bonding Technologies, Inc., Amherst, NH (US);
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C04B 41/00 (2006.01); C04B 35/571 (2006.01); C04B 35/573 (2006.01); C04B 35/645 (2006.01); C04B 37/00 (2006.01);
U.S. Cl.
CPC ...
C04B 35/571 (2013.01); C04B 35/573 (2013.01); C04B 35/645 (2013.01); C04B 37/001 (2013.01); C04B 2235/6562 (2013.01); C04B 2235/6565 (2013.01); C04B 2235/6567 (2013.01); C04B 2235/6581 (2013.01); C04B 2235/661 (2013.01); C04B 2235/767 (2013.01); C04B 2235/963 (2013.01); C04B 2237/365 (2013.01); C04B 2237/52 (2013.01);
Abstract
Method and system for bonding two or more CVD SiC articles together without the use of interface materials using applied forces from about 0.0035 MPa to about 0.035 MPa. The articles are pretreated for bonding. Graphite or other fixtures are used to apply forces in a vacuum or inert gas environment. Temperatures from about 1900° C. to about 2200° C. are used to initiate a β→α transition in the SiC to create bonded CVS SiC articles.