The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Dec. 14, 2012
Ushio Opto Semiconductors, Inc., Tokyo, JP;
Masato Hagimoto, Saku, JP;
Haruki Fukai, Komoro, JP;
Tsutomu Kiyosumi, Ueda, JP;
Shinji Sasaki, Miyota, JP;
Satoshi Kawanaka, Komoro, JP;
USHIO OPTO SEMICONDUCTORS, INC., Tokyo, JP;
Abstract
An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlGa)InP, a composition of the n-type cladding layer is expressed as (AlGa)InP (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlGa)InP (0.9<xp≦1), and xn and xp satisfy a relationship of xn<xp.