The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2016

Filed:

Jun. 27, 2014
Applicants:

Tsinghua University, Beijing, CN;

Institute of Physics, Chinese Academy of Sciences, Beijing, CN;

Inventors:

Qi-Kun Xue, Beijing, CN;

Xu-Cun Ma, Beijing, CN;

Li-Li Wang, Beijing, CN;

Xi Chen, Beijing, CN;

Jin-Feng Jia, Beijing, CN;

Ke He, Beijing, CN;

Shuai-Hua Ji, Beijing, CN;

Wen-Hao Zhang, Beijing, CN;

Qing-Yan Wang, Beijing, CN;

Zhi Li, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 39/24 (2006.01); H01L 39/12 (2006.01); H01B 13/00 (2006.01); H01B 12/06 (2006.01);
U.S. Cl.
CPC ...
H01L 39/2403 (2013.01); H01L 39/12 (2013.01); H01B 12/06 (2013.01); H01B 13/0036 (2013.01);
Abstract

A method for making a high-temperature superconducting film includes loading a SrTiOsubstrate in an ultra-high vacuum system. A single crystalline FeSe layer is grown on a surface of the SrTiOsubstrate by molecular beam epitaxy. A protective layer with a layered crystal structure is grown by molecular beam epitaxy and covering the single crystalline FeSe layer.


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