The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Dec. 30, 2014
Industrial Technology Research Institute, Hsinchu, TW;
Tyntek Corporation, Miaoli County, TW;
Yao-Jun Tsai, Taoyuan County, TW;
Shih-Yi Wen, Taipei, TW;
Chen-Peng Hsu, Hsinchu, TW;
Hung-Lieh Hu, Hsinchu, TW;
Chia-Chun Yu, Hsinchu, TW;
Yen-Chu Li, Miaoli County, TW;
Chun-Yi Tung, Yunlin County, TW;
Industrial Technology Research Institute, Hsinchu, TW;
TYNTEK CORPORATION, Miaoli County, TW;
Abstract
A light emitting diode includes a semiconductor stacked structure, a substrate, a first electrode, a second electrode and a third electrode. The semiconductor stacked structure includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. An undoped semiconductor layer over the first semiconductor layer may be not removed or not completely removed to increase the strength of the semiconductor stacked structure and improve the reliability of the LED and the production yields of manufacturing process. A roughened structure (or a photonic crystal) can be formed on the undoped semiconductor layer when the semiconductor stacked structure to improve the light emitting efficiency of the LED.