The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Jan. 23, 2014
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Kyung Ho Yoo, Incheon, KR;
Han Kyu Seong, Seoul, KR;
Nam Goo Cha, Ansan-si, KR;
Tae Woong Kim, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-do, KR;
Abstract
A semiconductor light emitting device including a first conductive semiconductor base layer on a substrate; an insulating layer on the first conductive semiconductor base layer, the insulating layer including a plurality of openings through which the first conductive semiconductor base layer is exposed; and a plurality of nanoscale light emitting structures on the first conductive semiconductor base layer, the nanoscale light emitting structures respectively including a first conductive semiconductor core on an exposed region of the first conductive semiconductor base layer, and an active layer, and a second conductive semiconductor layer sequentially disposed on a surface of the first conductive semiconductor core, wherein a lower edge of a side portion of each nanoscale light emitting structure is on an inner side wall of the opening in the insulating layer.