The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Jul. 28, 2015
Applicant:
Playnitride Inc., Tainan, TW;
Inventors:
Yen-Lin Lai, Tainan, TW;
Jyun-De Wu, Tainan, TW;
Assignee:
PlayNitride Inc., Tainan, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/20 (2006.01); H01L 27/15 (2006.01); H01L 31/109 (2006.01); H01L 33/12 (2010.01); H01L 33/58 (2010.01); H01L 33/00 (2010.01); H01L 33/32 (2010.01); C23C 14/34 (2006.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); C23C 14/34 (2013.01); H01L 33/0075 (2013.01); H01L 33/32 (2013.01); H01L 33/58 (2013.01);
Abstract
An epitaxy base including a substrate and a nucleating layer disposed on the substrate. The nucleating layer is an AlN layer with a single crystal structure. A diffraction pattern of the nucleating layer includes a plurality of dot patterns. Each of the dot patterns is substantially circular, and a ratio between lengths of any two diameters perpendicular to each other on each of the dot patterns ranges from approximately 0.9 to approximately 1.1. A semiconductor light emitting device, a manufacturing method of the epitaxy base, and a manufacturing method of the light emitting semiconductor device are further provided.