The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Jul. 29, 2009
Applicants:
Yong Jin Kim, Gumi-si, KR;
Dong Kun Lee, Gumi-si, KR;
Doo Soo Kim, Gyeongbuk, KR;
Inventors:
Assignee:
LG Siltron Inc., , KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/12 (2010.01); H01L 21/02 (2006.01); H01L 21/308 (2006.01); H01L 33/00 (2010.01); H01L 33/38 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02488 (2013.01); H01L 21/02491 (2013.01); H01L 21/02513 (2013.01); H01L 21/02573 (2013.01); H01L 21/02581 (2013.01); H01L 21/02658 (2013.01); H01L 21/3081 (2013.01); H01L 33/007 (2013.01); H01L 33/382 (2013.01);
Abstract
Disclosed are a semiconductor device, a light emitting device, and a method of manufacturing the same. The semiconductor device includes a substrate, a plurality of rods aligned on the substrate, a metal layer disposed on the substrate between the rods, and a semiconductor layer disposed on and between the rods. Electrical and optical characteristics of the semiconductor device are improved due to the metal layer.