The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Oct. 06, 2014
Applicant:
Wisconsin Alumni Research Foundation, Madison, WI (US);
Inventors:
Zhenqiang Ma, Middleton, WI (US);
Jung-Hun Seo, Madison, WI (US);
Assignee:
Wisconsin Alumni Research Foundation, Madison, WI (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/06 (2010.01); H01L 33/00 (2010.01); H01L 33/28 (2010.01); H01L 27/15 (2006.01); H01L 31/0328 (2006.01); H01L 21/283 (2006.01);
U.S. Cl.
CPC ...
H01L 33/06 (2013.01); H01L 33/0083 (2013.01); H01L 21/283 (2013.01); H01L 27/156 (2013.01); H01L 31/0328 (2013.01); H01L 33/0008 (2013.01); H01L 33/0016 (2013.01); H01L 33/28 (2013.01);
Abstract
Light-emitting devices having a multiple quantum well (MQW) pin diode structure and methods of making and using the devices are provided. The devices are composed of multilayered semiconductor heterostructures. The devices include one or more interfacial layers of a material that allows current tunneling through lattice mismatched heterogeneous junctions at the interfaces between the intrinsic active region and the p-type and/or n-type doped charge injection layers.