The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Oct. 22, 2014
Sumitomo Electric Industries, Ltd., Osaka-shi, JP;
Sony Corporation, Tokyo, JP;
Nobuhiro Saga, Osaka, JP;
Shinji Tokuyama, Osaka, JP;
Kazuhide Sumiyoshi, Osaka, JP;
Takashi Kyono, Osaka, JP;
Koji Katayama, Osaka, JP;
Tatsushi Hamaguchi, Kanagawa, JP;
Katsunori Yanashima, Kanagawa, JP;
Summitomo Electric Industries, Ltd., Osaka-shi, JP;
SONY CORPORATION, Tokyo, JP;
Abstract
In a group III nitride semiconductor device according to one aspect of the present invention, in a p-type group III nitride semiconductor region formed on a semi-polar plane substrate, the concentration of hydrogen (H) contained in the p-type group III nitride semiconductor region is 25% or less of the concentration of a p-type dopant therein, and the concentration of oxygen contained in the p-type group III nitride semiconductor region is 5×10atoms/cmor lower, and an angle between a normal axis of a primary surface of the semi-polar plane substrate and a c-axis of the semi-polar plane substrate is not lower than 45 degrees and not higher than 80 degrees or not lower than 100 degrees and not higher than 135 degrees in a waveguide axis direction of the group III nitride semiconductor device.