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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9425336 B1

PDFFull Text
Expired
Date of Patent:
Aug. 23, 2016

Filed:

Mar. 22, 2012

Photo active layer by silicon quantum dot and the fabrication method thereof

Applicants:

Kyoung Joong Kim, Daejeon, KR;

Seung Hui Hong, Seoul, KR;

Jae Hee Park, Suwon-si, KR;

Jong Shik Jang, Cheongju-si, KR;

Inventors:

Kyoung Joong Kim, Daejeon, KR;

Seung Hui Hong, Seoul, KR;

Jae Hee Park, Suwon-si, KR;

Jong Shik Jang, Cheongju-si, KR;

Assignee:

Korea Research Institute of Standards and Science, Daejon, KR;

Attorney:

The Webb Law Firm

Primary Examiner:

James Lin

Assistant Examiner:

Liesl C Baumann

Int. Cl.
CPC ...
H01L 31/0352 (2006.01); H01L 31/0368 (2006.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/34 (2010.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 31/035263 (2013.01); H01L 31/022425 (2013.01); H01L 31/03682 (2013.01); H01L 31/035218 (2013.01); H01L 31/182 (2013.01); H01L 33/0054 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/34 (2013.01); Y02E 10/546 (2013.01);
Abstract

Provided is a photo active layer for a solar cell or a light emitting diode and a fabricating method thereof. The photo active layer is formed by alternately stacking silicon quantum dot layers in which a plurality of silicon quantum dots containing conductive type impurities are formed in a medium, which is a silicon compound, and conductive layers, which are polycrystalline silicon layers, containing the same conductive type impurities as those of the silicon quantum dots.

Find Patent Forward Citations

Kim, Kyoung. (2016). Photo active layer by silicon quantum dot and the fabrication method thereof (U.S. Patent No. 9425336). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/9425336

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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