The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Jan. 24, 2012
Gouri Sankar Kar, Heverlee, BE;
Antonino Cacciato, Heverlee, BE;
Gouri Sankar Kar, Heverlee, BE;
Antonino Cacciato, Heverlee, BE;
IMEC, Leuven, BE;
Abstract
Described herein is a method for forming a vertical memory device () having a vertical channel region () sandwiched between a source region () and a drain region (). A charge trapping layer () is provided either side of the vertical channel region () and associated source and drain regions (). The source region () comprises a junction between a first region () comprising a first doping type with a first doping concentration and a second region () comprising a second doping type which is opposite to the first doping type and with a second doping concentration. The drain region () comprises the first doping type with a first doping concentration. In another embodiment, the drain region has two regions of differing doping types and concentrations and the source region comprises the first doping type with the first doping concentration.