The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Jan. 13, 2014
Applicant:
Cypress Semiconductor Corporation, San Jose, CA (US);
Inventors:
Minh Q. Tran, Milpitas, CA (US);
Minh-Van Ngo, Fremont, CA (US);
Alexander H. Nickel, Mountain View, CA (US);
Jeong-Uk Huh, Santa Clara, CA (US);
Assignee:
CYPRESS SEMICONDUCTOR CORPORATION, San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/788 (2006.01); H01L 27/115 (2006.01); H01L 21/28 (2006.01); H01L 29/51 (2006.01); H01L 29/792 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7888 (2013.01); H01L 21/28282 (2013.01); H01L 27/11517 (2013.01); H01L 27/11563 (2013.01); H01L 29/513 (2013.01); H01L 29/792 (2013.01);
Abstract
The present claimed subject matter is directed to memory device that includes substrate, a tunneling layer over the substrate, a floating gate over the tunneling layer, a dielectric over the floating gate and including silicon oxynitride, and a control gate over the dielectric.