The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Oct. 16, 2014
Applicant:
Universitaet Stuttgart, Stuttgart, DE;
Inventors:
Marcus Herrmann, Neuffen, DE;
Norbert Fruehauf, Sindelfingen-Darmsheim, DE;
Assignee:
UNIVERSITAET STUTTGART, Stuttgart, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/321 (2006.01); H01L 29/786 (2006.01); H01L 21/465 (2006.01); H01L 21/467 (2006.01); H01L 27/12 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78606 (2013.01); H01L 21/321 (2013.01); H01L 21/465 (2013.01); H01L 21/467 (2013.01); H01L 27/1225 (2013.01); H01L 29/45 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01);
Abstract
A thin-film transistor includes an oxidic semiconductor channel, a metallic or oxidic gate, drain and source contacts and at least one barrier layer positioned between the oxidic semiconductor channel and the drain and source contacts to inhibit an exchange of oxygen between the oxidic semiconductor channel and the drain and source contacts.