The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Feb. 25, 2014
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Chwee Iin Choong, Suwon-si, KR;
Sang-won Kim, Seoul, KR;
Jong-jin Park, Hwaseong-si, KR;
Ji-hyun Bae, Seoul, KR;
Jung-kyun Im, Yongin-si, KR;
Sang-hun Jeon, Seoul, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 51/05 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78603 (2013.01); H01L 29/66742 (2013.01); H01L 51/0558 (2013.01); H01L 29/0669 (2013.01);
Abstract
Provided is a thin film transistor on fiber and a method of manufacturing the same. The thin film transistor includes a fiber; a first electrode, a second electrode and a gate electrode formed on fiber; a channel formed between the first and second electrodes; an encapsulant encapsulating the fiber, the first, second, and gate electrodes, and an upper surface of the channel; and a gate insulating layer formed in a portion of the inner area of the encapsulant.