The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Aug. 26, 2010
Applicants:
Kyle Terrill, Santa Clara, CA (US);
Yang Gao, San Jose, CA (US);
Chanho Park, Pleasanton, CA (US);
Inventors:
Assignee:
Vishay-Siliconix, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7811 (2013.01); H01L 29/407 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 29/4238 (2013.01); H01L 29/42368 (2013.01);
Abstract
A split gate field effect transistor device. The device includes a split gate structure having a trench, a gate electrode and a source electrode. A first poly layer is disposed within the trench and is connected to the gate electrode. A second poly layer connected to the source electrode, wherein the first poly layer and the second poly layer are independent.