The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Jan. 20, 2016
Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;
Wataru Kanaga, Aichi, JP;
Hiroaki Kawano, Osaka, JP;
Shingo Matsuda, Kyoto, JP;
Katsuhiko Kawashima, Toyama, JP;
Abstract
A semiconductor device includes a source electrode portion and a drain electrode formed on a semiconductor stacked body so as to be at an interval from each other, and a gate electrode formed between the source electrode portion and the drain electrode at an interval from the source electrode portion and the drain electrode. The source electrode portion includes a first recess electrode being directly in contact with a two-dimensional electron gas layer formed in the first nitride semiconductor layer, and a surface electrode formed between the gate electrode and the first recess electrode and connected conductively to the two-dimensional electron gas layer. A source potential is applied to the surface electrode and the recess electrode, and a width of the surface electrode in a gate-source direction is 0.4 times or more a distance between a gate-side end of the surface electrode and a source-side end of the gate electrode.