The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Apr. 28, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Inventor:
Min-Hee Cho, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/165 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66977 (2013.01); H01L 27/1211 (2013.01); H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/165 (2013.01); H01L 29/785 (2013.01);
Abstract
Semiconductor devices include an intrinsic semiconductor region on a substrate, a source region adjacent to a first side surface of the semiconductor region and doped with a p-type dopant, a drain region adjacent to a second side surface of the semiconductor region, a gate electrode on the semiconductor region, a source gate electrode on the source region, and a drain gate electrode on the drain region. The second side surface is a reverse side of the first side surface. The drain region is doped with a p-type dopant.