The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Sep. 30, 2014
Applicant:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Inventor:
Fumitake Mieno, Shanghai, CN;
Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/088 (2006.01); H01L 29/49 (2006.01); H01L 21/28 (2006.01); H01L 21/762 (2006.01); H01L 21/8234 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/4925 (2013.01); H01L 21/28105 (2013.01); H01L 21/76224 (2013.01); H01L 21/823431 (2013.01); H01L 29/66795 (2013.01); H01L 29/785 (2013.01);
Abstract
A semiconductor device includes a semiconductor fin on a substrate. The semiconductor fin includes a stack of alternating layers of first and second materials that induce stress or strain to the channel of the semiconductor device for implementing a strained FinFET. The first and second materials are different. The second material layers include lateral recesses filled with an insulating layer to form an isolated FinFET structure to further induce stress in the channel region to improve the performance of the semiconductor device.