The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Sep. 30, 2014
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Fumitake Mieno, Shanghai, CN;
Abstract
A semiconductor device includes a semiconductor fin on a substrate. The semiconductor fin includes a stack of alternating layers of first and second materials that induce stress or strain to the channel of the semiconductor device for implementing a strained FinFET. The first and second materials are different. The second material layers include lateral recesses filled with an insulating layer to form an isolated FinFET structure to further induce stress in the channel region to improve the performance of the semiconductor device.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile