The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
May. 04, 2015
Applicants:
Nxp B. V., Eindhoven, NL;
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Inventors:
Markus Mueller, Brussels, BE;
Anco Heringa, Waalre, NL;
Assignee:
NXP B.V., Eindhoven, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/778 (2006.01); H01L 29/872 (2006.01); H01L 29/12 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1054 (2013.01); H01L 29/122 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/7783 (2013.01); H01L 29/872 (2013.01);
Abstract
A semiconductor device and a method of making the same. The device includes a semiconductor substrate having an AlGaN layer on a GaN layer. The device also includes first contact and a second contact. The average thickness of the AlGaN layer varies between the first contact and the second contact, for modulating the density of an electron gas in the GaN layer between the first contact and the second contact.