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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9425214 B1

PDFFull Text
Date of Patent:
Aug. 23, 2016

Filed:

Nov. 22, 2013

Thin film transistor substrate, method of manufacturing the same, and organic light emitting diode display using the same

Applicant:

Samsung Display Co., Ltd., Yongin, Gyeonggi-do, KR;

Inventors:

Young Sik Yoon, Yongin, KR;

Youn Joon Kim, Yongin, KR;

Seung Peom Noh, Yongin, KR;

Sang Jo Lee, Yongin, KR;

Ji Won Han, Yongin, KR;

Assignee:

Samsung Display Co., Ltd., Gyeonggi-do, KR;

Attorney:

Knobbe Martens Olson & Bear LLP

Primary Examiner:

Whitney T Moore

Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 27/32 (2006.01); H01L 21/28 (2006.01); H01L 27/12 (2006.01); H01L 21/02 (2006.01); H01L 21/268 (2006.01); H01L 51/00 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1218 (2013.01); H01L 21/02532 (2013.01); H01L 21/02686 (2013.01); H01L 27/1262 (2013.01); H01L 21/268 (2013.01); H01L 27/3244 (2013.01); H01L 51/0097 (2013.01); H01L 51/5253 (2013.01);
Abstract

A thin film transistor substrate includes: a polymer substrate, an oxide transparent electrode layer (TCO) formed on the polymer substrate, a barrier layer formed on the oxide transparent electrode layer, and a semiconductor layer formed on the barrier layer, in which the semiconductor layer is polysilicon. The polysilicon thin film transistor provides an oxide transparent electrode layer (TCO) which absorbs heat energy and light generated during a process of manufacturing the polysilicon thin film transistor to prevent a damage of the substrate using a polymer material.

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