The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Nov. 18, 2015
Applicant:
SK Hynix Inc., Icheon-si, Gyeonggi-do, KR;
Inventors:
Assignee:
SK HYNIX INC., Icheon-Si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 27/115 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/45 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/11565 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/456 (2013.01);
Abstract
A semiconductor device may include a first source layer, a first insulating layer located over the first source layer, and a first stacked structure located over the first insulating layer. The semiconductor device may include first channel layers passing through the first stacked structure and the first insulating layer. The semiconductor device may include a second source layer including a first region interposed between the first source layer and the first insulating layer and second regions interposed between the first channel layers and the first insulating layer, wherein the second regions of the second source layer directly contact each other.