The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Oct. 23, 2014
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Naoki Yasuda, Mie, JP;
Kabushiki Kaisha Toshiba, Minato-ku, JP;
Abstract
According to one embodiment, a non-volatile memory device includes first electrodes, at least one first semiconductor layer, a first memory film, second electrodes, at least one second semiconductor layer, and a second memory film. The first electrodes are stacked in a first direction. The one first semiconductor layer extends in the first direction through the first electrodes. The first memory film is provided between each of the first electrodes and the one first semiconductor layer. The second electrodes are stacked in the first direction and provided together with the first electrodes in a second direction orthogonal to the first direction. The one second semiconductor layer extends in the first direction through the second electrodes. The second memory film is provided between each of the second electrodes and the one second semiconductor layer. An outer diameter of the first memory film is larger than that of the second memory film.