The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Mar. 26, 2015
Applicant:
Seiko Epson Corporation, Tokyo, JP;
Inventors:
Assignee:
SEIKO EPSON CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/092 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/82385 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01);
Abstract
A semiconductor device includes a P-channel DMOS transistor provided with an N-type gate electrode, a P-channel MOS transistor provided with a P-type gate electrode, and an N-channel MOS transistor provided with an N-type gate electrode. The N-type gate electrode of the P-channel DMOS transistor desirably has a first end portion that is located on a source side of the P-channel DMOS transistor, a second end portion that is located on a drain side of the P-channel DMOS transistor, and a P-type diffusion layer at the first end portion.