The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2016

Filed:

May. 28, 2015
Applicant:

The United States of America As Represented BY the Secretary of the Navy, Washington, DC (US);

Inventor:

Jeffrey L. Titus, Bloomington, IN (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 29/78 (2006.01); H01L 29/808 (2006.01); H01L 23/552 (2006.01); H01L 31/02 (2006.01); H01L 27/144 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 23/552 (2013.01); H01L 27/144 (2013.01); H01L 29/7817 (2013.01); H01L 29/808 (2013.01); H01L 31/02016 (2013.01);
Abstract

Apparatuses and methods for modulating current/voltage response using multiple semi-conductive channel regions (SCR) produced from different integrated semiconductor structures are provided. In particular, embodiments include systems and methods for controlling current or mitigating electromagnetic or radiation interference effects using combined integrated functions of a lateral double-diffused metal-oxide semiconductor field effect transistor (LDMOSFET) and junction field effect transistor (JFET) disposed in proximity of a LDMOSFET's SCR within a certain orientation forming a second SCR.


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