The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 23, 2016

Filed:

Dec. 18, 2012
Applicant:

Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;

Inventors:

Ho-Jun Kim, Gyeonggi-do, KR;

Hae-Wang Lee, Gyeonggi-do, KR;

Chul-Hong Park, Gyeonggi-do, KR;

Dong-Kyun Sohn, Gyeonggi-do, KR;

Jong-Shik Yoon, Yongin-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/538 (2006.01); H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/768 (2006.01); H01L 23/528 (2006.01); H01L 23/532 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5384 (2013.01); H01L 21/76816 (2013.01); H01L 21/76831 (2013.01); H01L 21/76834 (2013.01); H01L 21/76885 (2013.01); H01L 21/76897 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01); H01L 29/7827 (2013.01); H01L 23/5283 (2013.01); H01L 23/53238 (2013.01); H01L 23/53266 (2013.01); H01L 2924/0002 (2013.01);
Abstract

Semiconductor devices, and a method for fabricating the same, include an interlayer dielectric film pattern over a substrate, a first wiring within the interlayer dielectric film pattern and having a first length in a first direction, a second wiring within the interlayer dielectric film pattern and separated from the first wiring, and a spacer contacting the first wiring and the second wiring. The spacer electrically separates the first wiring and the second wiring from each other. The second wiring has a second length different from the first length in the first direction.


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