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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9425147 B1

PDFFull Text
Date of Patent:
Aug. 23, 2016

Filed:

Apr. 01, 2011

Semiconductor device

Applicants:

Yuichi Nakao, Kyoto, JP;

Tadao Ohta, Kyoto, JP;

Inventors:

Yuichi Nakao, Kyoto, JP;

Tadao Ohta, Kyoto, JP;

Assignee:

ROHM CO., LTD., Kyoto, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Mark Tornow

Assistant Examiner:

Abbigale Boyle

Int. Cl.
CPC ...
H01L 23/52 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/528 (2006.01); H01L 23/31 (2006.01); H01L 23/00 (2006.01);
U.S. Cl.
CPC ...
H01L 23/53295 (2013.01); H01L 21/76832 (2013.01); H01L 21/76834 (2013.01); H01L 23/3171 (2013.01); H01L 23/3192 (2013.01); H01L 23/5283 (2013.01); H01L 23/53238 (2013.01); H01L 24/03 (2013.01); H01L 24/05 (2013.01); H01L 24/45 (2013.01); H01L 24/48 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05083 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05556 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/45144 (2013.01); H01L 2224/48463 (2013.01); H01L 2224/48624 (2013.01); H01L 2924/01004 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01005 (2013.01); H01L 2924/01006 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/01019 (2013.01); H01L 2924/01022 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01033 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01073 (2013.01); H01L 2924/01074 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2924/01082 (2013.01); H01L 2924/04941 (2013.01); H01L 2924/10253 (2013.01);
Abstract

A semiconductor device includes an interlayer insulating film; a wiring formed on the interlayer insulating film so as to protrude there from and made of a material having copper as a main component, the wiring having a thickness direction and having a cross sectional shape of an inverted trapezoid that becomes wider in width with distance away from the interlayer insulating film; and a passivation film formed so as to cover the wiring. The passivation film is made of a laminated film in which a first nitride film, an intermediate film, and a second nitride film are laminated in that order from the wiring side. The intermediate film is made of an insulating material differing from those of the first and second nitride films, and has a tapered portion having a cross sectional shape of a trapezoid that becomes narrower in width with distance away from the interlayer insulating film.

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