The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2016
Filed:
Sep. 19, 2014
Infineon Technologies Austria Ag, Villach, AT;
Arno Zechmann, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
An electrically conductive barrier layer is formed on a semiconductor substrate such that the barrier layer covers a first device terminal. A seed layer is formed on the barrier layer. The seed includes a noble metal other than gold. The substrate is masked so that a first mask opening is laterally aligned with the first terminal. An unmasked portion of the seed layer is electroplated using a gold electrolyte solution so as to form a first gold metallization structure in the first mask opening. The mask, the masked portions of the seed layer, and the barrier layer are removed. The noble metal from the unmasked portion of the seed layer is diffused into the first gold metallization structure. The first gold metallization structure is electrically connected to the first terminal via the barrier layer.